Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress
نویسندگان
چکیده
0026-2714/$ see front matter 2013 Elsevier Ltd. All rights reserved. http://dx.doi.org/10.1016/j.microrel.2013.07.095 ⇑ Corresponding author at: United Monolithic Semiconductor, 10 Av du Québec, 91140 Villebon-sur-Yvette, France. Tel.: +33 169863235. E-mail address: [email protected] (L. Brunel). L. Brunel a,b,⇑, B. Lambert , P. Mezenge , J. Bataille , D. Floriot , J. Grünenpütt , H. Blanck , D. Carisetti , Y. Gourdel , N. Malbert , A. Curutchet , N. Labat b
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 53 شماره
صفحات -
تاریخ انتشار 2013